问题遇到的现象和发生背景
多层离子注入
 问题相关代码，请勿粘贴截图
go athena
#Rs calculated depth, 0-3 um, implant tilt=7 deg
#sub resistance,2-5 ohm.cm

#implant energy, 10~200 keV

#implant dose, 5e14

#RTP parameters

line x loc=0 spac=0.01
line x loc=0.1 spac=0.01

line y loc=0.0 spac=0.01
line y loc=6 spac=0.01

init sub

init silicon c.boron=2e14

implant

implant phos dose=3e12 energy=660 crystal tilt=0 pearson n.ion=20000
implant phos dose=7e12 energy=230 crystal tilt=0 pearson n.ion=20000
implant boron dose=3e13 energy=20 crystal tilt=7 bca n.ion=20000
#implant boron dose=1e15 energy=45 crystal tilt=0 bca n.ion=20000
#implant Boron dose=$"Nimplant" energy=$"Eimplant" crystal tilt=0
#structure outfile=RTP_before.dat
#Boron concentration extract before annealing
extract name="SRP_RTP_before" curve(depth, log10(srp material="Silicon" mat.occno=1 x.val=0.1)) outfile="RTP_before.dat"
#sheet resistance extract before annealing
#extract name="RS_RTP_before" sheet.res material="Silicon" mat.occno=1 x.val=0.1 region.occno=1

RTP process

#method two.dim
#diffus time=$"Dif_time" second temp=$"Dif_temp" nitro press=1
##Boron concentration extract after annealing
#extract name="SRP_RTP_after" curve(depth, log10(srp material="Silicon" mat.occno=1 x.val=0.1)) outfile="RTP_after.dat"
#sheet resistance extract after annealing
extract name="RS_RTP_before_after" sheet.res material="Silicon" mat.occno=1 x.val=0.1 region.occno=1
#structure outfile=RTP_after.str

#display the calculated results
#tonyplot RTP_before.str -add RTP_after.str -set stru.set
tonyplot RTP_before.dat
#tonyplot RTP_before.dat -set concentration.set

quit
运行结果及报错内容
运行后这个结果跟正常的结果不一样
这是我的结果

这是正常的结果

我的解答思路和尝试过的方法
这个应该怎么更改衬底条件，网格，还有衬底电阻率呢？？
我想要达到的结果